MT29F4G01ABAFD12-IT
Manufacturer: Micron
The MT29F4G01ABAFD12-IT is an NAND Flash memory from Micron. Density is 4 Gbit. Organisation is x1. Supply voltage is 3.3 V. Offered in the TBGA24 package. Rated operating temperature is Industrial. Parameters above are taken from the manufacturer datasheet; confirm the current revision before finalising a design.
Overview
Micron lists the MT29F4G01ABAFD12-IT as a 4 Gbit NAND Flash memory with an Industrial temperature grade, an x1 organisation, TBGA24 packaging and an operating voltage of 3.3 V.
In practice, program, erase and read performance are specified under different test conditions, so the datasheet conditions should be compared with the intended workload.
Key features
- 4 Gbit memory density
- x1 Organisation
- 3.3 V supply voltage
- TBGA24 package
- Operating temperature range Industrial
- Micron original part, traceable supply
Typical applications
- Data logging
- Embedded storage
- Automotive infotainment
- Industrial gateways
- Security cameras
- Portable media
- Point of sale terminals
Specifications
Memory array
| Density | 4 Gbit |
|---|---|
| Organisation | x1 |
Interface and supply
| Voltage | 3.3 V |
|---|---|
| Operating temperature | Industrial |
Ordering
| Package | TBGA24 |
|---|---|
| Ordering code | MT29F4G01ABAFD12-IT |
Note on parameters. The figures above are taken from the manufacturer datasheet for MT29F4G01ABAFD12-IT. Electrical limits vary by ordering option and revision — confirm the current datasheet before finalising your design.
Package and ordering
| Ordering code | Package | Operating temp. / grade |
|---|---|---|
| MT29F4G01ABAFD12-IT | TBGA24 | Industrial |
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Sourcing MT29F4G01ABAFD12-IT
We supply MT29F4G01ABAFD12-IT with original manufacturer documentation and a quotation that states lead time, packaging and price breaks. Send your annual quantity and target date and you will get a reply with the datasheet attached.