MT29F4G01ABAFD12-AAT
Manufacturer: Micron
The MT29F4G01ABAFD12-AAT is an NAND Flash memory from Micron. Density is 4 Gbit. Organisation is x1. Supply voltage is 3.3 V. Offered in the TBGA24 package. Rated operating temperature is Industrial. Parameters above are taken from the manufacturer datasheet; confirm the current revision before finalising a design.
Overview
The MT29F4G01ABAFD12-AAT is a 4 Gbit NAND Flash memory from Micron with an operating voltage of 3.3 V, an Industrial temperature grade, the TBGA24 package and an x1 organisation.
Operating temperature grade is part of the ordering code and is better chosen for the real environment than for the bench condition.
Key features
- 4 Gbit memory density
- x1 Organisation
- 3.3 V supply voltage
- TBGA24 package
- Operating temperature range Industrial
- Micron original part, traceable supply
Typical applications
- Data logging
- Embedded storage
- Automotive infotainment
- Industrial gateways
- Security cameras
- Portable media
- Point of sale terminals
Specifications
Memory array
| Density | 4 Gbit |
|---|---|
| Organisation | x1 |
Interface and supply
| Voltage | 3.3 V |
|---|---|
| Operating temperature | Industrial |
Ordering
| Package | TBGA24 |
|---|---|
| Ordering code | MT29F4G01ABAFD12-AAT |
Note on parameters. The figures above are taken from the manufacturer datasheet for MT29F4G01ABAFD12-AAT. Electrical limits vary by ordering option and revision — confirm the current datasheet before finalising your design.
Package and ordering
| Ordering code | Package | Operating temp. / grade |
|---|---|---|
| MT29F4G01ABAFD12-AAT | TBGA24 | Industrial |
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Sourcing MT29F4G01ABAFD12-AAT
We supply MT29F4G01ABAFD12-AAT with original manufacturer documentation and a quotation that states lead time, packaging and price breaks. Send your annual quantity and target date and you will get a reply with the datasheet attached.