MT29F256G08AUCABH3-10ITZ
Manufacturer: Micron
The MT29F256G08AUCABH3-10ITZ is a NAND Flash device from Micron. Density is 256 Gbit. Organisation is x1. Supply voltage is 3.3 V. Offered in the LBGA100 package. Rated operating temperature is Industrial. Parameters above are taken from the manufacturer datasheet; confirm the current revision before finalising a design.
Overview
Key features
- 256 Gbit memory density
- x1 Organisation
- 3.3 V supply voltage
- LBGA100 package
- Operating temperature range Industrial
- Micron original part, traceable supply
Typical applications
- Data logging
- Embedded storage
- Automotive infotainment
- Industrial gateways
- Security cameras
- Portable media
- Point of sale terminals
Specifications
Memory array
| Density | 256 Gbit |
|---|---|
| Organisation | x1 |
Interface and supply
| Voltage | 3.3 V |
|---|---|
| Operating temperature | Industrial |
Ordering
| Package | LBGA100 |
|---|---|
| Ordering code | MT29F256G08AUCABH3-10ITZ |
Note on parameters. The figures above are taken from the manufacturer datasheet for MT29F256G08AUCABH3-10ITZ. Electrical limits vary by ordering option and revision — confirm the current datasheet before finalising your design.
Package and ordering
| Ordering code | Package | Operating temp. / grade |
|---|---|---|
| MT29F256G08AUCABH3-10ITZ | LBGA100 | Industrial |
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Sourcing MT29F256G08AUCABH3-10ITZ
We supply MT29F256G08AUCABH3-10ITZ with original manufacturer documentation and a quotation that states lead time, packaging and price breaks. Send your annual quantity and target date and you will get a reply with the datasheet attached.