CY15B104QSN-108SXI
Manufacturer: Cypress
The CY15B104QSN-108SXI is a SRAM device from Cypress. Density is 4 Mbit. Organisation is 512Kbx8. Supply voltage is 2.7 – 3.6 V. Offered in the DSO-8 package. Rated operating temperature is -40 to +85 °C. Parameters above are taken from the manufacturer datasheet; confirm the current revision before finalising a design.
Overview
Key features
- 4 Mbit memory density
- 512Kbx8 Organisation
- 2.7 – 3.6 V supply voltage
- DSO-8 package
- Operating temperature range -40 to +85 °C
- Cypress original part, traceable supply
Typical applications
- Embedded buffering
- Industrial control
- Networking equipment
- Test and measurement
- Medical devices
- Motor control
Specifications
Memory array
| Density | 4 Mbit |
|---|---|
| Organisation | 512Kbx8 |
Interface and supply
| Voltage | 2.7 – 3.6 V |
|---|---|
| Operating temperature | -40 to +85 °C |
Ordering
| Package | DSO-8 |
|---|---|
| Ordering code | CY15B104QSN-108SXI |
Note on parameters. The figures above are taken from the manufacturer datasheet for CY15B104QSN-108SXI. Electrical limits vary by ordering option and revision — confirm the current datasheet before finalising your design.
Package and ordering
| Ordering code | Package | Operating temp. / grade |
|---|---|---|
| CY15B104QSN-108SXI | DSO-8 | -40 to +85 °C |
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Sourcing CY15B104QSN-108SXI
We supply CY15B104QSN-108SXI with original manufacturer documentation and a quotation that states lead time, packaging and price breaks. Send your annual quantity and target date and you will get a reply with the datasheet attached.